silicon epitaxial planar diode BAV16W features pb lead-free z fast switching speed:trr=4ns(typ) z surface mount package ideally suited for automatic insertion z for general purpose sw itching applications z high conductance z available in lead free version applications sod-123 z surface mount fast switching diode ordering information type no. marking package code BAV16W t6 sod-123 maximum rating @ ta=25 unless otherwise specified characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc reverse voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current i fm 300 ma average rectified output current i o 150 ma non-repetitive peak forward surge current @t=1.0 s @t=1.0 s i fsm 2.0 1.0 a power dissipation p d 400 mw thermal resistance junction to ambient air r ja 315 /w operating and storage temperature rage t j ,t stg -65 to+150 diode semiconductor korea www.diode.kr
silicon epitaxial planar diode BAV16W electrical characteristics @ ta=2 5 unless otherwise specified characteristic symbol mi n max unit test condition reverse breakdown voltage v (br)r 75 - v i r =1.0 a forward voltage v f 0.62 0.72 0.855 1.0 1.25 v i f =5ma i f =10ma i f =100ma i f =150ma reverse current i r - 1.0 25 a na v r =75v v r =20v capacitance between terminals c t - 2.0 pf v r =0,f=1.0mhz reverse recovery time t rr - 4.0 ns i f =i r =10ma, i rr =0.1i r ,r l =100 ? typical characteristics @ ta=25 unless otherwise specified www.diode.kr diode semiconductor korea
silicon epitaxial planar diode BAV16W package outline plastic surface mounted package sod-123 sod-123 dim min max a 1.4 1.8 b 2.55 2.85 c 1.15 typical d 0.5 0.6 e 0.3 0.4 h 0.02 0.10 j 0.1 typical k 3.55 3.85 all dimensions in mm soldering footprint k j h e d c a b unit : mm package information device package shipping BAV16W sod-123 3000/tape&reel www.diode.kr diode semiconductor korea
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